Product Summary

The FF200R12KS4 is a 62mm C-series module with the fast IGBT2 for high-frequency switching.

Parametrics

Absolute maximum ratings: (1)collector-emitter voltage: 1200 V at Tvj=25℃; (2)DC-collector current: 200 A at Tc=65℃, Tvj=150℃, 275 A at Tc=25℃, Tvj=150℃; (3)repetitive peak collector current: 400 A; (4)total power dissipation: 1400 W at Tc=25℃, Tvj=150℃; (5)gate-emitter peak voltage: +/-20 V.

Features

characteristic values: (1)collector-emitter saturation voltage: 3.20 V typ and 3.70 V max; (2)gate threshold voltage: 4.5 to 6.5 V; (3)gate charge: 2.10 μC; (4)internal gate resistor: 2.5 Ω; (5)input capacitance: 13.0 nF.

Diagrams

Image Part No Mfg Description Data Sheet Download Pricing
(USD)
Quantity
FF200R12KS4
FF200R12KS4

Infineon Technologies

IGBT Modules 1200V 200A DUAL

Data Sheet

0-6: $97.09
6-10: $87.38
Image Part No Mfg Description Data Sheet Download Pricing
(USD)
Quantity
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Data Sheet

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Data Sheet

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8-10: $51.60
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Data Sheet

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Data Sheet

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