Product Summary
The FF200R12KS4 is a 62mm C-series module with the fast IGBT2 for high-frequency switching.
Parametrics
Absolute maximum ratings: (1)collector-emitter voltage: 1200 V at Tvj=25℃; (2)DC-collector current: 200 A at Tc=65℃, Tvj=150℃, 275 A at Tc=25℃, Tvj=150℃; (3)repetitive peak collector current: 400 A; (4)total power dissipation: 1400 W at Tc=25℃, Tvj=150℃; (5)gate-emitter peak voltage: +/-20 V.
Features
characteristic values: (1)collector-emitter saturation voltage: 3.20 V typ and 3.70 V max; (2)gate threshold voltage: 4.5 to 6.5 V; (3)gate charge: 2.10 μC; (4)internal gate resistor: 2.5 Ω; (5)input capacitance: 13.0 nF.
Diagrams
Image | Part No | Mfg | Description | Pricing (USD) |
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FF200R12KS4 |
Infineon Technologies |
IGBT Modules 1200V 200A DUAL |
Data Sheet |
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Image | Part No | Mfg | Description | Pricing (USD) |
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FF200R06KE3 |
Infineon Technologies |
IGBT Modules N-CH 600V 260A |
Data Sheet |
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FF200R06ME3 |
Infineon Technologies |
IGBT Modules IGBT 600V 200A |
Data Sheet |
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FF200R06YE3 |
Infineon Technologies |
IGBT Modules IGBT 600V 200A |
Data Sheet |
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FF200R06YE3ENG |
Infineon Technologies |
IGBT Modules |
Data Sheet |
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FF200R12KE3 |
Infineon Technologies |
IGBT Transistors 1200V 200A DUAL |
Data Sheet |
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FF200R12KE3_B2 |
Infineon Technologies |
IGBT Modules N-CH 1.2KV 295A |
Data Sheet |
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