Product Summary

The IPP075N15N3G is an OptiMOS 3 Power-Transistor.

Parametrics

Absolute maximum ratings: (1)Continuous drain current: 100 A at TC=25℃, 93 A at TC=100℃; (2)Pulsed drain current: 400 A at TC=25℃; (3)Avalanche energy, single pulse: 780 mJ at ID=100 A, RGS=25 Ω; (4)Reverse diode dv /dt: 6 kV/μs at ID=100 A, VDS=120 V, di/dt =100 A/μs, Tj,max=175 ℃; (5)Gate source voltage: ±20 V; (6)Power dissipation: 300 W at TC=25 ℃; (7)Operating and storage temperature: -55 to 175 ℃; (8)IEC climatic category; DIN IEC 68-1: 55/175/56.

Features

Features: (1)N-channel, normal level; (2)Excellent gate charge x R DS(on) product (FOM); (3)Very low on-resistance R DS(on); (4)175 ℃ operating temperature; (5)Pb-free lead plating; RoHS compliant; (6)Qualified according to JEDEC1) for target application; (7)Ideal for high-frequency switching and synchronous rectification; (8)Halogen-free according to IEC61249-2-21.

Diagrams

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